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Heating chambersAccurate treatment

For gentle thermal treatment of components in electronics and semiconductor production. Inert gas atmosphere (N₂, forming gas). Up to 600°C.

600°CMax. temperature
Inert gasN₂ / forming gas
semiconductorApplication
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Heating chambers
Application

Applications

  • Electronic power components
  • Semiconductor wafers (250–420 °C)
  • Annealing after ion implantation
  • Processes under inert gas
Options
  • Aluminum/stainless steel drawers
  • Multi-chamber versions
  • Program controller up to 20 programs
  • Multi-channel graphics recorder
  • Walkable models
  • Double solenoid valves N₂/O₂
Quick info
semiconductor400×1000×600mm450°C · 8.5 kW
Process pipeØ250×750mm550 °C · 10 kW · Rapid cooling
atmosphereN₂ / forming gas
controlPID + program logic
Areas of application

Industries

Semiconductor manufacturing electronics Power components Research Inert gas
Application examples

Customer examples

CUSTOMER EXAMPLE 1 - UP TO 450 °C - 400 × 1,000 × 600 MM - A# 1367550
Dimensions400 × 1,000 × 600mm
Operating temperatureup to 450 °C
Heating output8.5kW
This heat chamber is used for the thermal treatment of wafer disks for semiconductor production in a nitrogen and forming gas atmosphere. GoalElectron irradiation and ion implantations cause radiation damage in the semiconductor wafer, which can be specifically healed using a temperature process (250 °C to 420 °C). The annealing process must be able to be carried out under an inert gas atmosphere with a high degree of temperature stability and reproducibility.

(W × D × H)

Design
  • electronic temperature controller with electronic overtemperature protection
  • Power switching: solid state relay
  • Temperature recording via 4 type “K” sheathed thermocouples for process monitoring
  • Stainless steel process pipe made of material 1.4541 / 1.4301 installed in the interior
  • Inner diameter: 200mm
  • Outer diameter: 204mm
  • Tube length: 720 mm
  • Base 5 mm thick with inlet for the preheated process gas
  • Flow meters, pressure reducers and shut-off valves for nitrogen and forming gas content
  • Paint finish: RAL 6011 reseda green structure
gallery
Heating chamber customer example 01 01Heating chamber customer example 01 02Heating chamber customer example 01 03Heating chamber customer example 01 04
CUSTOMER EXAMPLE 2 - UP TO 550 °C - USABLE SPACE: Ø 250 × 750 MM LONG - A# 1170496
usable spaceØ 250 × 750 mm long
Operating temperatureup to 550 °C
Heating output10kW
cooling fan460W

This heat chamber is used for the thermal treatment of wafer disks for semiconductor production in a nitrogen and forming gas atmosphere.

Design
  • electronic program controller with three programs
  • Program selection and start via separate control switches
  • electronic over-temperature protection
  • Power switching: solid state relay
  • Heating band monitoring (max. 700 °C)
  • Actual value output via flange socket
  • Drying chamber made of stainless steel tube material 1.4571 with installed heating-cooling ceramic system
  • Double fan for rapid cooling of the interior temperature
  • Flow meter for nitrogen and oxygen content with 2/2 directional valves, controlled via latching switches or program controllers
  • Paint finish: RAL 6011 reseda green structure
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FAQ

Frequently asked questions

Nitrogen and forming gas. Double solenoid valves control the gas supply.

Up to 600°C. Semiconductors typically 250–420 °C.

Up to 20 programs with 16 segments can be saved.

Individually according to requirements.

Heating chambersenquiry

Accurate to the degree · Inert gas · For electronics and semiconductors

+43 7434 43880-0info@kitmail.at